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- 1 - pe05717-ps preliminary sony reserves the right to change products and specifications without prior notice. this information does not convey any licens e by any implication or ot herwise under any patents or other right . application circuits shown, if any, are typical examples illu strating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. preliminary CXA2726GA pdic for dvd r/rw and ram description the CXA2726GA is a pdic (photodetector ic) developed as a photodetector for the optical pickup of dvd r/rw and ram drives. the photodiode and circuits operate at high speed to allow high-speed read and write. this ic also has a sleep function and small cob (chip on board) package. (applications: optical pickups for dvd r/rw and ram) features ? wide band (120mhz) ? rf differential output (read mode: a to d signal addition output) ? wpp output (wpp1 = a + b, wpp2 = c + d signal addition output) ? mode switching function (6-mode switch ing + power save mode: sw1, sw2) ? 12-division photodiode supporting dpp ? small cob package of land grid array type ? sleep function (power save mode) package 18-pin lflga (plastic) structure bipolar silicon monolithic ic
CXA2726GA - 2 - absolute maximum ratings (ta = 25 c) operating conditions output sensitivity table ? supply voltage v cc 5.5 v ? operating temperature topr ?10 to +80 c ? storage temperature tstg ?40 to +100 c ? allowable power dissipation p d 550 mw ? supply voltage 1 v cc 4.5 to 5.5 v ? supply voltage 2 v c 1.3 to 2.5 v ? sw1, sw2: low v sw 0 to 0.4 v ? sw1, sw2: middle v sw 1.2 to 2.0 v ? sw1, sw2: high v sw 2.9 to v cc v or open mode name sw1 sw2 main sub rf wpp unit 1 read low middle 10.00 40.20 8.95 1.67 mv/ w 2 low high/hi-z 22.40 90.00 20.10 3.73 3 write middle middle 1.30 5.23 ? 0.87 4 middle high/hi-z 2.91 11.71 ? 1.95 5 high/hi-z middle 1.00 4.02 ? 0.67 6 high/hi-z high/hi-z 2.24 9.01 ? 1.50 sleep sleep don?t care low ? ? ? ?
CXA2726GA - 3 - block diagram arithmetic formulas y rf+ = 0.895 (ao + bo + co + do) y rf? = ?0.895 (ao + bo + co + do) y wpp1 = (ao + bo) y wpp2 = (co + do) * in each mode, is as follows. mode1 and 2 : 0.167 mode3 to 6 : 0.669 * rf+ and rf? operate only in mode-1 and mode-2. vc a 6 a vc b 8 b vc c 13 c vc d 11 d vc 7 e+i d' c' b' a' 1 gnd vc 9 sw1 3 sw2 5 wpp1 b a vc 14 wpp2 d c vc 18 rf+ vc vc 16 rf? vcc 10 vc 2 vcc i e 12 nc vc 4 f+j j f vc 17 g+k k g vc 15 h+l l d' a' b' c' h
CXA2726GA - 4 - pin configuration (top view) pin description sw2 rf+ g+k c b wpp1 f+j rf? h+l wpp2 d a v cc gnd nc e+i 14 15 16 17 18 11 vc 10 12 13 6 7 8 sw1 9 1 2 3 4 5 pin no. symbol i/o equivalent circuit description 1gnd i for a dual power supply: negative power supply for a single power supply: gnd 2v cc i positive power supply. 3sw2 i mode switching input. 0 to 0.4v: low 1.2 to 2.0v: middle 2.9v to v cc : high 1 30k 3 1k
CXA2726GA - 5 - 7 4 17 15 e+i f+j g+k h+l o output of voltage signals converted from optical signals. 5 14 wpp1 wpp2 o non-inverted output of added a to d signals. wpp1 = a + b wpp2 = c + d 6 8 13 11 a b c d o output of voltage signals converted from optical signals. 9sw1 i mode switching input. 0 to 0.4v: low 1.2 to 2.0v: middle 2.9v to v cc : high 10 v c i for a dual power supply: gnd for a single power supply: center voltage input pin no. symbol i/o equivalent circuit description 4 7 17 15 14 5 3k 9k 6k 6 k 8 6 13 11 60k 9 1k 10
CXA2726GA - 6 - 16 rf? o inverted output of added a to d signals. 18 rf+ o non-inverted output of added a to d signals. pin no. symbol i/o equivalent circuit description 16 18
CXA2726GA - 7 - electrical and optical characteristics 1 (mode-1: read mode/low gain) (v cc = 5.0v, v c = 1.4v, v sw 1 = 0v, v sw 2 = 1.65v, ta = 25 c) item symbol conditions min. typ. max. unit current consumption i cc in the dark ? 44.0 57.5 ma output offset voltage (a to d) voff in the dark, v c reference ?30 0 30 mv output offset voltage (e+i to h+l) voff in the dark, v c reference ?35 0 35 mv output offset voltage (wpp1, wpp2) voff in the dark, v c reference ?30 0 30 mv output offset voltage (rf+) voff in the dark, v c reference ?110 0 110 mv output offset voltage (rf?) voff in the dark, v cc ? v c reference ?110 0 110 mv output offset matrix ? voff (a + b) ? (c + d), in the dark ?30 0 30 mv (a + d) ? (b + c), in the dark ?30 0 30 mv (a + c) ? (b + d), in the dark ?30 0 30 mv (g + h + k + l) ? (e + f + i + j), in the dark ?30 0 30 mv a + b + c + d, in the dark ?50 0 50 mv e + f + g + h + i + j + k + l, in the dark ?50 0 50 mv (rf+) ? (rf?), in the dark ?160 0 160 mv offset temperature drift (a to d) * ? voff/t in the dark ?100 0 100 v/ c offset temperature drift (e+i to h+l) * ? voff/t in the dark ?150 0 150 v/ c offset temperature drift (wpp1, wpp2) * ? voff/t in the dark ?100 0 100 v/ c offset temperature drift (rf+, rf?) * ? voff/t in the dark ?1 0 1 mv/ c output voltage (a to d) * vo = 650nm, 780nm, po = 10 w 7.5 10.0 12.5 mv/ w output voltage (e+i to h+l) * vo = 650nm, 780nm, po = 10 w 30.15 40.20 50.25 mv/ w output voltage (wpp1, wpp2) * vo = 650nm, 780nm, po = 10 w1.251.672.09mv/ w output voltage (rf+) * vo = 650nm, 780nm, po = 10 w 6.71 8.95 11.19 mv/ w output voltage (rf?) * vo = 650nm, 780nm, po = 10 w ?11.19 ?8.95 ?6.71 mv/ w output voltage ratio (e+i to h+l)/(a to d) * v or = 650nm, 780nm, po = 10 w3.914.124.33 ? output voltage ratio ((rf+) + (rf?))/(a to d) * v or = 650nm, 780nm, po = 10 w1.771.861.95 ? maximum output potential (a to d, e+i to h+l) vomax = 650nm, 780nm, po = 1mw 3.8 4.0 ? v
CXA2726GA - 8 - note) 1. output offset voltage: v c is the reference. 2. the output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. items with an asterisk ( * ) are design confirmation items. 4. measurement by optical input: measurement is made by emitting light to the center of each photodiode. 5. the load conditions (for v c ) are as follows. a to d: 2k ? //20pf, e+i to h+l, wpp1, wpp2: 6k ? //20pf, rf+, rf?: (1 f + (1.3k ? //10pf))//10pf maximum output potential (wpp1, wpp2) vomax = 650nm, 780nm, po = 1mw 2.0 2.2 ? v maximum output potential (rf+) vomax = 650nm, 780nm, po = 1mw 3.8 4.0 ? v minimum output potential (rf?) vomin = 650nm, 780nm, po = 1mw ? 1.0 1.2 v frequency response (a to d) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 90 120 ? mhz frequency response (e+i to h+l) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 20 30 ? mhz frequency response (wpp1, wpp2) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 90 120 ? mhz frequency response ((rf+) ? (rf?)) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 90 120 ? mhz group delay difference 1 (a to d) * ? gd1 100khz to 70mhz ? 1.0 ? ns group delay difference 1 (wpp1, wpp2) * ? gd1 100khz to 70mhz ? 1.1 ? ns group delay difference 1 ((rf+) ? (rf?)) * ? gd1 100khz to 70mhz ? 0.9 ? ns group delay difference 2 (a to d) * ? gd2 100khz to 90mhz ? 1.0 ? ns group delay difference 2 (wpp1, wpp2) * ? gd2 100khz to 90mhz ? 1.8 ? ns group delay difference 2 ((rf+) ? (rf?)) * ? gd2 100khz to 90mhz ? 1.0 ? ns slew rate (a to d) * sr calculated at 10% to 90% ? 250 ? v/ s slew rate (e+i to h+l) * sr calculated at 10% to 90% ? 170 ? v/ s slew rate (rf+, rf?) * sr calculated at 10% to 90% ? 225 ? v/ s output noise level (a to d) * vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?87 ?82 dbm output noise level (rf+, rf?) vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?81 ?75 dbm item symbol conditions min. typ. max. unit
CXA2726GA - 9 - electrical and optical characteristics 2 (mode-2: read mode/high gain) (v cc = 5.0v, v c = 1.4v, v sw 1 = 0v, v sw 2 = 3.3v, ta = 25 c) item symbol conditions min. typ. max. unit current consumption i cc in the dark ? 44.0 57.5 ma output offset voltage (a to d) voff in the dark, v c reference ?30 0 30 mv output offset voltage (e+i to h+l) voff in the dark, v c reference ?35 0 35 mv output offset voltage (wpp1, wpp2) voff in the dark, v c reference ?30 0 30 mv output offset voltage (rf+) voff in the dark, v c reference ?110 0 110 mv output offset voltage (rf?) voff in the dark, v cc ? v c reference ?110 0 110 mv output offset matrix ? voff (a + b) ? (c + d), in the dark ?30 0 30 mv (a + d) ? (b + c), in the dark ?30 0 30 mv (a + c) ? (b + d), in the dark ?30 0 30 mv (g + h + k + l) ? (e + f + i + j), in the dark ?30 0 30 mv a + b + c + d, in the dark ?50 0 50 mv e + f + g + h + i + j + k + l, in the dark ?50 0 50 mv (rf+) ? (rf?), in the dark ?160 0 160 mv offset temperature drift (a to d) * ? voff/t in the dark ?100 0 100 v/ c offset temperature drift (e+i to h+l) * ? voff/t in the dark ?150 0 150 v/ c offset temperature drift (wpp1, wpp2) * ? voff/t in the dark ?100 0 100 v/ c offset temperature drift (rf+, rf?) * ? voff/t in the dark ?1 0 1 mv/ c output voltage (a to d) * vo = 650nm, 780nm, po = 10 w 16.8 22.4 28.0 mv/ w output voltage (e+i to h+l) * vo = 650nm, 780nm, po = 10 w 67.5 90.0 112.5 mv/ w output voltage (wpp1, wpp2) * vo = 650nm, 780nm, po = 10 w2.793.734.67mv/ w output voltage (rf+) * vo = 650nm, 780nm, po = 10 w 15.0 20.1 25.1 mv/ w output voltage (rf?) * vo = 650nm, 780nm, po = 10 w ?25.1 ?20.1 ?15.0 mv/ w output voltage ratio (e+i to h+l)/(a to d) * v or = 650nm, 780nm, po = 10 w3.884.084.28 ? output voltage ratio ((rf+) + (rf?))/(a to d) * v or = 650nm, 780nm, po = 10 w1.791.881.97 ? maximum output potential (a to d, e+i to h+l) vomax = 650nm, 780nm, po = 1mw 3.8 4.0 ? v
CXA2726GA - 10 - note) 1. output offset voltage: v c is the reference. 2. the output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. items with an asterisk ( * ) are design confirmation items. 4. measurement by optical input: measurement is made by emitting light to the center of each photodiode. 5. the load conditions (for v c ) are as follows. a to d: 2k ? //20pf, e+i to h+l, wpp1, wpp2: 6k ? //20pf, rf+, rf?: (1 f + (1.3k ? //10pf))//10pf maximum output potential (wpp1, wpp2) vomax = 650nm, 780nm, po = 1mw 2.0 2.2 ? v maximum output potential (rf+) vomax = 650nm, 780nm, po = 1mw 3.8 4.0 ? v minimum output potential (rf?) vomin = 650nm, 780nm, po = 1mw ? 1.0 1.2 v frequency response (a to d) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 90 120 ? mhz frequency response (e+i to h+l) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 20 30 ? mhz frequency response (wpp1, wpp2) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 90 120 ? mhz frequency response ((rf+) ? (rf?)) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 90 120 ? mhz group delay difference 1 (a to d) * ? gd1 100khz to 70mhz ? 1.2 ? ns group delay difference 1 (wpp1, wpp2) * ? gd1 100khz to 70mhz ? 1.2 ? ns group delay difference 1 ((rf+) ? (rf?)) * ? gd1 100khz to 70mhz ? 1.0 ? ns group delay difference 2 (a to d) * ? gd2 100khz to 90mhz ? 1.5 ? ns group delay difference 2 (wpp1, wpp2) * ? gd2 100khz to 90mhz ? 1.8 ? ns group delay difference 2 ((rf+) ? (rf?)) * ? gd2 100khz to 90mhz ? 1.0 ? ns slew rate (a to d) * sr calculated at 10% to 90% ? 250 ? v/ s slew rate (e+i to h+l) * sr calculated at 10% to 90% ? 180 ? v/ s slew rate (rf+, rf?) * sr calculated at 10% to 90% ? 225 ? v/ s output noise level (a to d) * vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?80 ?75 dbm output noise level (rf+, rf?) vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?74 ?69 dbm item symbol conditions min. typ. max. unit
CXA2726GA - 11 - electrical and optical characteristics 3 (mode-3: write mode) (v cc = 5.0v, v c = 1.4v, v sw 1 = 1.65v, v sw 2 = 1.65v, ta = 25 c) item symbol conditions min. typ. max. unit current consumption i cc in the dark ? 39.0 51.0 ma output offset voltage (a to d) voff in the dark, v c reference ?30 0 30 mv output offset voltage (e+i to h+l) voff in the dark, v c reference ?35 0 35 mv output offset voltage (wpp1, wpp2) voff in the dark, v c reference ?30 0 30 mv output offset matrix ? voff (a + b) ? (c + d), in the dark ?30 0 30 mv (a + d) ? (b + c), in the dark ?30 0 30 mv (a + c) ? (b + d), in the dark ?30 0 30 mv (g + h + k + l) ? (e + f + i + j), in the dark ?30 0 30 mv a + b + c + d, in the dark ?50 0 50 mv e + f + g + h + i + j + k + l, in the dark ?50 0 50 mv offset temperature drift (a to d) * ? voff/t in the dark ?100 0 100 v/ c offset temperature drift (e+i to h+l) * ? voff/t in the dark ?150 0 150 v/ c offset temperature drift (wpp1, wpp2) * ? voff/t in the dark ?100 0 100 v/ c output voltage (a to d) vo = 650nm, 780nm, po = 350 w0.981.301.63mv/ w output voltage (e+i to h+l) vo = 650nm, 780nm, po = 350 w3.925.236.54mv/ w output voltage (wpp1, wpp2) vo = 650nm, 780nm, po = 350 w0.650.871.09mv/ w output voltage ratio (e+i to h+l)/(a to d) v or = 650nm, 780nm, po = 350 w3.894.094.29 ? maximum output potential (a to d, e+i to h+l, wpp1, wpp2) vomax = 650nm, 780nm, po = 1mw 3.3 3.5 ? v frequency response (a to d) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 90 120 ? mhz frequency response (e+i to h+l) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 25 60 ? mhz frequency response (wpp1, wpp2) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 100 130 ? mhz
CXA2726GA - 12 - note) 1. output offset voltage: v c is the reference. 2. the output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. items with an asterisk ( * ) are design confirmation items. 4. measurement by optical input: measurement is made by emitting light to the center of each photodiode. 5. the load conditions (for v c ) are as follows. a to d: 2k ? //20pf, e+i to h+l, wpp1, wpp2: 6k ? //20pf group delay difference 1 (a to d, wpp1, wpp2) * ? gd1 100khz to 70mhz ? 1.0 ? ns group delay difference 2 (a to d, wpp1, wpp2) * ? gd2 100khz to 90mhz ? 1.9 ? ns settling time (a to d) * tset output 299mv 15 3mv ? 18.0 ? ns settling time (e+i to h+l) * tset output 323mv 6.5 1.3mv ? 27.0 ? ns settling time (wpp1, wpp2) * tset output 20mv 399 4mv ? 15.0 ? ns settling time (wpp1, wpp2) * tset output 399mv 20 4mv ? 15.0 ? ns slew rate (a to d) * sr calculated at 10% to 90% ? 210 ? v/ s slew rate (e+i to h+l) * sr calculated at 10% to 90% ? 200 ? v/ s slew rate (wpp1, wpp2) * sr calculated at 10% to 90% ? 260 ? v/ s output noise level (a to d) * vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?93 ?88 dbm output noise level (wpp1, wpp2) * vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?89 ?84 dbm item symbol conditions min. typ. max. unit
CXA2726GA - 13 - electrical and optical characteristics 4 (mode-4: write mode) (v cc = 5.0v, v c = 1.4v, v sw 1 = 1.65v, v sw 2 = 3.3v, ta = 25 c) item symbol conditions min. typ. max. unit current consumption i cc in the dark ? 39.0 51.0 ma output offset voltage (a to d) voff in the dark, v c reference ?30 0 30 mv output offset voltage (e+i to h+l) voff in the dark, v c reference ?35 0 35 mv output offset voltage (wpp1, wpp2) voff in the dark, v c reference ?30 0 30 mv output offset matrix ? voff (a + b) ? (c + d), in the dark ?30 0 30 mv (a + d) ? (b + c), in the dark ?30 0 30 mv (a + c) ? (b + d), in the dark ?30 0 30 mv (g + h + k + l) ? (e + f + i + j), in the dark ?30 0 30 mv a + b + c + d, in the dark ?50 0 50 mv e + f + g + h + i + j + k + l, in the dark ?50 0 50 mv offset temperature drift (a to d) * ? voff/t in the dark ?100 0 100 v/ c offset temperature drift (e+i to h+l) * ? voff/t in the dark ?150 0 150 v/ c offset temperature drift (wpp1, wpp2) * ? voff/t in the dark ?100 0 100 v/ c output voltage (a to d) vo = 650nm, 780nm, po = 175 w 2.73 2.91 3.41 mv/ w output voltage (e+i to h+l) vo = 650nm, 780nm, po = 175 w 8.78 11.71 14.63 mv/ w output voltage (wpp1, wpp2) vo = 650nm, 780nm, po = 175 w 1.46 1.95 2.44 mv/ w output voltage ratio (e+i to h+l)/(a to d) v or = 650nm, 780nm, po = 175 w 3.78 3.98 4.18 ? maximum output potential (a to d, e+i to h+l, wpp1, wpp2) vomax = 650nm, 780nm, po = 1mw 3.5 3.7 ? v frequency response (a to d) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 90 120 ? mhz frequency response (e+i to h+l) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 30 50 ? mhz frequency response (wpp1, wpp2) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 100 130 ? mhz
CXA2726GA - 14 - note) 1. output offset voltage: v c is the reference. 2. the output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. items with an asterisk ( * ) are design confirmation items. 4. measurement by optical input: measurement is made by emitting light to the center of each photodiode. 5. the load conditions (for v c ) are as follows. a to d: 2k ? //20pf, e+i to h+l, wpp1, wpp2: 6k ? //20pf group delay difference 1 (a to d, wpp1, wpp2) * ? gd1 100khz to 70mhz ? 1.4 ? ns group delay difference 2 (a to d, wpp1, wpp2) * ? gd2 100khz to 90mhz ? 2.4 ? ns settling time (a to d) * tset output 690mv 34.5 6.9mv ? 18.0 ? ns settling time (e+i to h+l) * tset output 745mv 14.9 3mv ? 27.0 ? ns settling time (wpp1, wpp2) * tset output 920mv 46 9.2mv ? 15.0 ? ns settling time (wpp1, wpp2) * tset output 46mv 920 9.2mv ? 15.0 ? ns slew rate (a to d) * sr calculated at 10% to 90% ? 250 ? v/ s slew rate (e+i to h+l) * sr calculated at 10% to 90% ? 200 ? v/ s slew rate (wpp1, wpp2) * sr calculated at 10% to 90% ? 260 ? v/ s output noise level (a to d) * vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?87 ?82 dbm output noise level (wpp1, wpp2) * vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?85 ?80 dbm item symbol conditions min. typ. max. unit
CXA2726GA - 15 - electrical and optical characteristics 5 (mode-5: write mode) (v cc = 5.0v, v c = 1.4v, v sw 1 = 3.3v, v sw 2 = 1.65v, ta = 25 c) item symbol conditions min. typ. max. unit current consumption i cc in the dark ? 39.0 51.0 ma output offset voltage (a to d) voff in the dark, v c reference ?30 0 30 mv output offset voltage (e+i to h+l) voff in the dark, v c reference ?35 0 35 mv output offset voltage (wpp1, wpp2) voff in the dark, v c reference ?30 0 30 mv output offset matrix ? voff (a + b) ? (c + d), in the dark ?30 0 30 mv (a + d) ? (b + c), in the dark ?30 0 30 mv (a + c) ? (b + d), in the dark ?30 0 30 mv (g + h + k + l) ? (e + f + i + j), in the dark ?30 0 30 mv a + b + c + d, in the dark ?50 0 50 mv e + f + g + h + i + j + k + l, in the dark ?50 0 50 mv offset temperature drift (a to d) * ? voff/t in the dark ?100 0 100 v/ c offset temperature drift (e+i to h+l) * ? voff/t in the dark ?150 0 150 v/ c offset temperature drift (wpp1, wpp2) * ? voff/t in the dark ?1 0 1 mv/ c output voltage (a to d) vo = 650nm, 780nm, po = 350 w0.751.001.25mv/ w output voltage (e+i to h+l) vo = 650nm, 780nm, po = 350 w3.014.025.03mv/ w output voltage (wpp1, wpp2) vo = 650nm, 780nm, po = 350 w0.500.670.84mv/ w output voltage ratio (e+i to h+l)/(a to d) v or = 650nm, 780nm, po = 350 w3.954.164.37 ? maximum output potential (a to d, e+i to h+l, wpp1, wpp2) vomax = 650nm, 780nm, po = 1mw 3.3 3.5 ? v frequency response (a to d) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 90 120 ? mhz frequency response (e+i to h+l) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 50 75 ? mhz frequency response (wpp1, wpp2) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 95 150 ? mhz
CXA2726GA - 16 - note) 1. output offset voltage: v c is the reference. 2. the output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. items with an asterisk ( * ) are design confirmation items. 4. measurement by optical input: measurement is made by emitting light to the center of each photodiode. 5. the load conditions (for v c ) are as follows. a to d: 2k ? //20pf, e+i to h+l, wpp1, wpp2: 6k ? //20pf group delay difference 1 (a to d, wpp1, wpp2) * ? gd1 100khz to 70mhz ? 1.4 ? ns group delay difference 2 (a to d, wpp1, wpp2) * ? gd2 100khz to 90mhz ? 2.4 ? ns settling time (a to d) * tset output 230mv 11.5 2.3mv ? 15.0 ? ns settling time (e+i to h+l) * tset output 248mv 5 1mv ? 24.0 ? ns settling time (wpp1, wpp2) * tset output 306.7mv 15.3 3.1mv ? 15.0 ? ns settling time (wpp1, wpp2) * tset output 15.3mv 306.7 3.1mv ? 15.0 ? ns slew rate (a to d) * sr calculated at 10% to 90% ? 210 ? v/ s slew rate (e+i to h+l) * sr calculated at 10% to 90% ? 200 ? v/ s slew rate (wpp1, wpp2) * sr calculated at 10% to 90% ? 260 ? v/ s output noise level (a to d) * vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?93 ?88 dbm output noise level (wpp1, wpp2) * vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?89 ?84 dbm item symbol conditions min. typ. max. unit
CXA2726GA - 17 - electrical and optical characteristics 6 (mode-6: write mode) (v cc = 5.0v, v c = 1.4v, v sw 1 = 3.3v, v sw 2 = 3.3v, ta = 25 c) item symbol conditions min. typ. max. unit current consumption i cc in the dark ? 39.0 51.0 ma output offset voltage (a to d) voff in the dark, v c reference ?30 0 30 mv output offset voltage (e+i to h+l) voff in the dark, v c reference ?35 0 35 mv output offset voltage (wpp1, wpp2) voff in the dark, v c reference ?30 0 30 mv output offset matrix ? voff (a + b) ? (c + d), in the dark ?30 0 30 mv (a + d) ? (b + c), in the dark ?30 0 30 mv (a + c) ? (b + d), in the dark ?30 0 30 mv (g + h + k + l) ? (e + f + i + j), in the dark ?30 0 30 mv a + b + c + d, in the dark ?50 0 50 mv e + f + g + h + i + j + k + l, in the dark ?50 0 50 mv offset temperature drift (a to d) * ? voff/t in the dark ?100 0 100 v/ c offset temperature drift (e+i to h+l) * ? voff/t in the dark ?150 0 150 v/ c offset temperature drift (wpp1, wpp2) * ? voff/t in the dark ?100 0 100 v/ c output voltage (a to d) vo = 650nm, 780nm, po = 175 w1.682.242.80mv/ w output voltage (e+i to h+l) vo = 650nm, 780nm, po = 175 w 6.75 9.01 11.26 mv/ w output voltage (wpp1, wpp2) vo = 650nm, 780nm, po = 175 w1.121.501.88mv/ w output voltage ratio (e+i to h+l)/(a to d) v or = 650nm, 780nm, po = 175 w3.834.034.23 ? maximum output potential (a to d, e+i to h+l, wpp1, wpp2) vomax = 650nm, 780nm, po = 1mw 3.5 3.7 ? v frequency response (a to d) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 90 120 ? mhz frequency response (e+i to h+l) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 35 60 ? mhz frequency response (wpp1, wpp2) * fc = 650nm, 780nm po = 10 w dc + 4 wp-p 100khz reference, ?3db 95 150 ? mhz
CXA2726GA - 18 - note) 1. output offset voltage: v c is the reference. 2. the output voltage represents the potential variation of the output pin between the optical emission and the dark state. 3. items with an asterisk ( * ) are design confirmation items. 4. measurement by optical input: measurement is made by emitting light to the center of each photodiode. 5. the load conditions (for v c ) are as follows. a to d: 2k ? //20pf, e+i to h+l, wpp1, wpp2: 6k ? //20pf group delay difference 1 (a to d, wpp1, wpp2) * ? gd1 100khz to 70mhz ? 1.2 ? ns group delay difference 2 (a to d, wpp1, wpp2) * ? gd2 100khz to 90mhz ? 2.3 ? ns settling time (a to d) * tset output 515mv 25.8 5.2mv ? 15.0 ? ns settling time (e+i to h+l) * tset output 556.6mv 11.1 2.2mv ? 24.0 ? ns settling time (wpp1, wpp2) * tset output 687mv 34.4 6.9mv ? 15.0 ? ns settling time (wpp1, wpp2) * tset output 34.4mv 687 6.9mv ? 15.0 ? ns slew rate (a to d) * sr calculated at 10% to 90% ? 250 ? v/ s slew rate (e+i to h+l) * sr calculated at 10% to 90% ? 200 ? v/ s slew rate (wpp1, wpp2) * sr calculated at 10% to 90% ? 260 ? v/ s output noise level (a to d) * vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?87 ?82 dbm output noise level (wpp1, wpp2) * vn rbw = 30khz, f = 1 to 90mhz, in the dark ? ?85 ?80 dbm item symbol conditions min. typ. max. unit
CXA2726GA - 19 - electrical and optical characteristics 7 (read to write mode switching characteristics) (v cc = 5.0v, v c = 1.4v, ta = 25 c) electrical and optical characteristics 8 (sleep mode) (v cc = 5.0v, v c = 1.4v, v sw 2 = 0v, ta = 25 c) item symbol conditions min. typ. max. unit mode switching time (a to d, rf+, rf?) tset = 650nm, 780nm, po = 5 w output level 2% (read mode ? write mode) ? 180 ? ns item symbol conditions min. typ. max. unit current consumption i cc in the dark ? 0.7 1.0 ma
CXA2726GA - 20 - measurement circuit vc a vcc 6 b 8 c 13 d 11 f+j 4 e+i vcc vc gnd rf? rf+ 7 2 10 1 5 g+k 17 wpp1 14 h+l 15 wpp2 nc sw2 sw1 9 12 3 16 ? the load conditions are as follows. a to d : 2k ? //20pf e+i to h+l, wpp1, wpp2 : 6k ? //20pf rf+, rf? : (1f + (1.3k ? //10pf))//10pf 18
CXA2726GA - 21 - photodetector pattern dimensions (unit: m) * division line width: 4 m 120 top view 120 100 120 120 d c a b e f g h i j k l 9 9 100 170 170
CXA2726GA - 22 - example of representative characteristics (frequency response) mode-1 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] a to d frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] e+i to h+l frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] wpp1 and wpp2 frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] rf+ and rf? frequency response gain [db] 0
CXA2726GA - 23 - mode-2 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] a to d frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] e+i to h+l frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] wpp1 and wpp2 frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] rf+ and rf? frequency response gain [db] 0
CXA2726GA - 24 - mode-3 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] a to d frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] e+i to h+l frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] wpp1 and wpp2 frequency response gain [db] 0
CXA2726GA - 25 - mode-4 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] wpp1 and wpp2 frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] a to d frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] e+i to h+l frequency response gain [db] 0
CXA2726GA - 26 - mode-5 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] a to d frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] e+i to h+l frequency response gain [db] 0 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 4 1m 10m 100m 1g frequency [hz] wpp1 and wpp2 frequency response gain [db] 2
CXA2726GA - 27 - mode-6 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] a to d frequency response gain [db] 0 ?16 ?14 ?12 ?10 ?8 ?6 ?4 ?2 2 1m 10m 100m 1g frequency [hz] e+i to h+l frequency response gain [db] 0 ?14 ?12 ?10 ?8 ?6 ?4 ?2 0 4 1m 10m 100m 1g frequency [hz] wpp1 and wpp2 frequency response gain [db] 2
CXA2726GA - 28 - example of representative characteristics (settling characteristics) mode-3 ?0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] a to d settling characteristics ?0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] e+i to h+l settling characteristics ?0.10 0.00 0.10 0.20 0.30 0.40 0.50 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] wpp1 and wpp2 settling characteristics
CXA2726GA - 29 - mode-4 ?0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] a to d settling characteristics ?0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] e+i to h+l settling characteristics ?0.20 0.00 0.20 0.40 0.60 0.80 1.00 1.20 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] wpp1 and wpp2 settling characteristics
CXA2726GA - 30 - mode-5 ?0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] a to d settling characteristics ?0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] e+i to h+l settling characteristics ?0.10 ?0.05 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] wpp1 and wpp2 settling characteristics
CXA2726GA - 31 - mode-6 ?0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] a to d settling characteristics ?0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] output voltage [v] e+i to h+l settling characteristics ?0.20 ?0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 ?5 0 5 10 15 20 25 30 35 40 45 time [ns] wpp1 and wpp2 settling characteristics output voltage [v]
CXA2726GA - 32 - notes on operation 1. power supply the CXA2726GA can be used with a single power supply or a dual power supply. however, this ic is not provided with a center voltage generating circuit, and so when used with a single power supply the center voltage must be supplied from the rf amplifier or other device. the power supply connections for each case are shown in the table below. the potential difference between the v cc pin and the gnd pin should be in the range of 4.5 to 5.5v for both a single power supply and a dual power supply. 2. mechanical strength of package the mechanical strength of the package is not guaranteed for the CXA2726GA. do not employ a mounting method which applies a heavy load to the package. 3. visual inspection standard the visual inspection standards over the photodetector are as follows. (1) foreign object limit a to l: equivalent area 10 m or less (2) inspection method using a metallurgical microscope ( 50, coaxial illumination, bright field image), focus on the photodetector and measure the sharp shadow size. (3) inspection range entire photodetector area (entire area of a to l on page 21). 4. bypass capacitors connect 0.1f capacitors ?between the v cc and v c pins and between the v c and gnd pins? or ?between the v cc and gnd pins and between the v c and gnd pins? to lower the power supply line impedance. use a flexible printed circuit (fpc) pattern or take other measures so that the bypass capacitors can be located near the pdic. 5. electrostatic strength the CXA2726GA has a electrostatic strength of 300v *1 , and should be used in an environment where countermeasures against electrosta tic discharge have been implemented. *1 testing method: eiaj ed-4701-1 c-111a testing method a 6. soldering reflow soldering: finish refl ow soldering under the recommended conditions described on the next page. also, take care not to apply stress to the pack age during preheating and in the heated condition including immediately after soldering because the resin is softened in these cases. v cc (pin 2) v c (pin 10) gnd (pin 1) dual power supply positive power supply gnd negative power supply single power supply positive power supply center voltage gnd
CXA2726GA - 33 - reflow soldering recommended conditions 1 1. perform infrared or hot air reflow, or use an oven that combines these methods. 2. finish reflow soldering within the followi ng range after unsealing the moisture-proof packing. 30 c/70%rh/8h reflow 30 c/70%rh/8h reflow note) perform reflow soldering a maximum of two times. when reflow soldering cannot be perfo rmed within these specifications, baking should first be performed under either of the following conditions. [baking conditions] ? 125 c, 10 to 48h ? baking can be performed in the taped condition. ? baking should be performed only one time. 3. reflow conditions: perform reflow solderi ng within the range shown in the figure below. be sure to consult your sony representative when per forming reflow so ldering outside of the ranges described above. 50 100 150 150?c 200 250 temperature [?c] heating time 180?c 230?c or more peak: 250?c max. 90 30 s 30 10 s soldering zone pre-heating zone 2 to 6?c/s (3 to 6?c/s) 2 to 4?c/s
CXA2726GA - 34 - reflow soldering recommended conditions 2 1. perform infrared or hot air reflow, or use an oven that combines these methods. 2. finish reflow soldering within the followi ng range after unsealing the moisture-proof packing. 30 c/80%rh/12h reflow note) perform reflow soldering only one time. when reflow soldering cannot be perfo rmed within these specifications, baking should first be performed under either of the following conditions. [baking conditions] ? 125 c, 10 to 48h ? baking can be performed in the taped condition. ? baking should be performed only one time. 3. reflow conditions: perform reflow solderi ng within the range shown in the figure below. be sure to consult your sony representative when per forming reflow so ldering outside of the ranges described above. 50 100 150 150?c 200 250 temperature [?c] heating time 180?c 230?c or more peak: 240?c max. 90 30 s 30 10 s soldering zone pre-heating zone 2 to 6?c/s (3 to 6?c/s) 2 to 4?c/s
CXA2726GA - 35 - pin 1 indication explanation figure surface pin 1 indication back (resist window diagram) top view top view d c a b e f g h i j k l
CXA2726GA - 36 - photodetector position (unit: mm) ? the resin thickness (mechanical dimension) over the photodetector is 0.35 0.2mm. the resin refractive index is as follows. 650nm: n = 1.55, 780nm: n = 1.54 ? the photodetector center position accuracy is as follows. x, y: 0 0.16mm, angular : 0 2 (with the x axis as = 0 ) top view y x 0.38 0.2 0.35 0.2 resin uppermost surface surface that senses the incident light back surface photodetector: center of package d c a b e f g h i j k l
CXA2726GA - 37 - sony corporation package outline (unit: mm) 18pin lflga sony code jeita code jedec code lflga-18p-391 package material terminal treatment terminal material package mass glass epoxy nickel & gold plating copper 4.5 0.1 3.2 0.1 1.25 0.1 s 0.1 s 0.03g 0.5 18 17 16 15 14 13 12 11 10 98 76 5 43 2 1 0.8 0.8 0.8 0.8 0.8 0.8 0.8 pin 1 index 18- 0.45 0.03

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